EXICON ECX10P20 Transistor MOSFET (2SJ162)

EXICON ECX10P20 Transistor MOSFET 2SJ162
Exicon MOSFETS have been specifically designed for high power linear use. They offer high voltage capability, high slew rate and low distortion, making them the ideal choice for audio amplifier design.

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Shipping date: 27-02-2024.

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Accessories for this product

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Exicon ECX10P20

Transistor MOSFET 2SJ162

Exicon ECX10P20 Transistor MOSFET (2SJ162)

Exicon MOSFETS have been specifically designed for high power linear use. They offer high voltage capability, high slew rate and low distortion, making them the ideal choice for audio amplifier design. Their operating and thermal stability makes them extremely reliable and eliminates the need for a protection circuit. These advantages, combined with high bandwidth, low power requirements and easy paralleling, make it easy to build robust amplifiers with excellent sound characteristics.

The EXC10P20 is an excellent equivalent of the 2SJ162, with improved performance:

  • Specifically designed for audio amplification applications.
  • High thermal conductivity.
  • Excellent frequency characteristics.
  • Built-in protection diode.
  • No current concentration, for a high resistance to electrical destruction.
  • Thermal characteristics protecting against short circuits and thermal runaway.
  • Complementary to the EXC10N20 model
Exicon ECX10P20 Transistor MOSFET (2SJ162)

Technical characteristics

Specifications
Product typeMOSFET
Number of pins3
PackageTO-247
maximum ratings (Tc = 25°C)
Drain-Source voltage (Vdss)-200V
Gate-Source voltage (Vgss)+/-14V
Continuous drain current (Id)-8A
Body drain diode current (Idr)-8A
Allowable power dissipation * Tcase=25°C (Pd)125W
Channel temperature(Tch)150°C
Storage temperature range (Tstg)-55°C à 150°C
Electrical characteristics (TC = 25°C)
SymbolParametersTest conditionsMin.Typ.Max.
BVdsxDrain-Source breakdown voltageVgs = 10V
Id = -10mA
-200V--
Vgs(off)Gate-Source cut-off voltageVds = 10V
Id = -100mA
-0.15V--1.5V
Vds(sat)Drain-Source saturation voltageVgd = 0
Id = -8A
---10V
IdsxDrain-Source cut-off currentVgs = 10V
Vds = 200V
---10mA
Dynamic characteristics
SymbolParametersTest conditionsMin.Typ.Max.
CissInput capacitance--500pF-
CossOutput capacitanceVgs = 0-300pF-
CrssReverse transfer capacitancef = 1MHz-10pF-
TonTurn-on timeVds = -20V-100ns-
ToffTurn-off timeId = -7A-50ns-
Exicon ECX10P20 Transistor MOSFET (2SJ162)
 
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EXICON ECX10P20 Transistor MOSFET (2SJ162)
Exicon MOSFETS have been specifically designed for high power linear use. They offer high voltage capability, high slew rate and low distortion,...

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