EXICON ECW20P20 Transistor MOSFET

EXICON ECX10P20 Transistor MOSFET (2SJ162)
Exicon MOSFETS have been specifically designed for high power linear use. They offer high voltage capability, high slew rate and low distortion, making them the ideal choice for audio amplifier design.
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Reference : 17657
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Shipping date: 28-05-2024.

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2 Years warranty

Accessories for this product

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Exicon ECW20P20

Transistor MOSFET

EXICON ECW20P20 Transistor MOSFET

Exicon MOSFETS have been specifically designed for high power linear use. They offer high voltage capability, high slew rate and low distortion, making them the ideal choice for audio amplifier design. Their operating and thermal stability makes them extremely reliable and eliminates the need for a protection circuit. These advantages, combined with high bandwidth, low power requirements and easy paralleling, make it easy to build robust amplifiers with excellent sound characteristics.

The ECW20P20 has great performance:

  • Specifically designed for audio amplification applications.
  • High thermal conductivity.
  • Excellent frequency characteristics.
  • Built-in protection diode.
  • No current concentration, for a high resistance to electrical destruction.
  • Thermal characteristics protecting against short circuits and thermal runaway.
  • Complementary to the ECW20N20 model
EXICON ECW20P20 Transistor MOSFET

Technical characteristics

Specifications
Product typeMOSFET
Number of pins3
PackageTO 264
maximum ratings (Tc = 25°C)
Drain-Source voltage (Vdss)-200V
Gate-Source voltage (Vgss)+/-14V
Continuous drain current (Id)-16A
Body drain diode current (Idr)-16A
Allowable power dissipation * Tcase=25°C (Pd)250W
Channel temperature(Tch)150°C
Storage temperature range (Tstg)-55°C à 150°C
Electrical characteristics (TC = 25°C)
SymbolParametersTest conditionsMin.Typ.Max.
BVdsxDrain-Source breakdown voltageVgs = -10V
Id = -10mA
-200V--
Vgs(off)Gate-Source cut-off voltageVds = -10V
Id = -100mA
-0.1V--1.5V
Vds(sat)Drain-Source saturation voltageVgd = 0
Id = -16A
---12V
IdsxDrain-Source cut-off currentVgs = -10V
Vds = -200V
---10mA
Dynamic characteristics
SymbolParametersTest conditionsMin.Typ.Max.
CissInput capacitanceVgs = 0 / Vds =-10v / F=1.0MHz-1850pF-
CossOutput capacitanceVgs = 0 / Vds =-10v / F=1.0MHz-850pF-
CrssReverse transfer capacitanceVgs = 0 / Vds =-10v / F=1.0MHz-55pF-
TonTurn-on timeVds = -20V / Id = 7A-150ns-
ToffTurn-off timeVds = -20V / Id = 7A-105ns-
EXICON ECW20P20 Transistor MOSFET
 
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EXICON ECW20P20 Transistor MOSFET
Exicon MOSFETS have been specifically designed for high power linear use. They offer high voltage capability, high slew rate and low distortion,...

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